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Chip Schottky Barrier Diodes
FM5822V-A
Silicon epitaxial planer type
Formosa MS
SMA
0.185(4.8) 0.177(4.4) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.067(1.7) 0.060(1.5)
0.110(2.8) 0.094(2.4)
0.165(4.2) 0.150(3.8)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram
Dimensions in inches and (millimeters)
MARKING CODE : SK34
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER Repetitive peak reverse voltage RMS voltage Continuous reverse voltage Forward rectified current Forward surge current Thermal resistance Diode junction capacitance Operating temperature Storage temperature Ambient temperature = 80o C 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) Junction to ambient f=1MHz and applied 4vDC reverse voltage CONDITIONS Symbol VRRM VRMS VR IO IFSM RqJA CJ TJ TSTG -50 -50 MIN. TYP. MAX. 40 28 40 3.0 80 55 250 +125 +150
o
UNIT V V V A A C/w pF
o o
C C
ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted)
PARAMETER Forward voltage Reverse current IF = 1.0 AMPERE DC VR = Peak reverse voltage TA = 25 C
o
CONDITIONS
Symbol VF IR
MIN.
TYP.
MAX. 0.40 0.5 20
UNIT V mA mA
VR = Peak reverse voltage TA = 100o C
RATING AND CHARACTERISTIC CURVES (FM5822V-A)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CHARACTERISTICS
3.0 2.5
50
INSTANTANEOUS FORWARD CURRENT,(A)
2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 180 200
10
1.0
Tj=25 C Pulse Width 300us 1% Duty Cycle
AMBIENT TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWAARD SURGE CURRENT,(A)
100
0.1
80
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLT AGE,(V)
60
Tj=25 C 8.3ms Single Half Sine Wave JEDEC method
40
20
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
1 5 10 50 100
0
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
700 600 500 400 300 200 100 0
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
10
1.0
Tj=75 C
.1
Tj=25 C
.01
.05
.1
.5
1
5
10
50
100
.01 0
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)

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